### 石墨炔修饰的ZnO薄膜紫外探测器

1. 1 北京理工大学光电学院，北京市混合现实与新型显示工程技术研究中心，北京 100081
2 中国科学院化学研究所，有机固体实验室，北京 100190
• 收稿日期:2017-12-14 发布日期:2018-04-09
• 通讯作者: 喻志农,王吉政 E-mail:znyu@bit.edu.cn;jizheng@iccas.ac.cn
• 基金资助:
国家自然科学基金(61675024)

### ZnO Ultraviolet Photodetector Modified with Graphdiyne

Zhijuan HUANG1,Zhinong YU1,*(),Yan LI1,Jizheng WANG2,*()

1. 1 Beijing Engineering Research Center of Mixed Reality and Advanced Display, School of Optoelectronics, Beijing Institute of Technology, Beijing 100081, P.R.China
2 Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R.China
• Received:2017-12-14 Published:2018-04-09
• Contact: Zhinong YU,Jizheng WANG E-mail:znyu@bit.edu.cn;jizheng@iccas.ac.cn
• Supported by:
the National Natural Science Foundation of China(61675024)

Abstract:

ZnO is an ideal material for ultraviolet (UV) detection due to its wide direct-bandgap, high exciton binding energy, and high internal photoconductive gain.However, ZnO UV detectors have the disadvantages of slow response speed and low detectivity.Graphdiyne (GD) is a novel carbonaceous allotrope, and possesses excellent electronic performance in air.In this study, the metal-semiconductor-metal (MSM) structured lateral ZnO UV detectors were prepared, and GD was employed to modify the ZnO surface.The effects of GD deposited 1–3 times (viz.1T, 2T, and 3T GD) on the performance of ZnO ultraviolet detector were carefully investigated.The results show that the dark current of the bare ZnO detector is 24 μA under a bias of 10 V, while that of the graphdiyne-modified detector is ~0.34 μA (about two orders of magnitude reduction).The dark current remains almost the same for the 1T, 2T and 3T GD films.The photocurrents of 1–3T GD-modified detectors were 0.21, 0.32, 0.27 mA, respectively.The device modified with 2T GD displays the highest photocurrent, which is significantly enhanced in comparison to the unmodified device (0.08 mA) under a 365-nm UV radiation of 100 μW·cm−2.Meanwhile, the responsivity and detectivity are improved remarkably.Under a bias of 10 V, the 2T-GD-modified detector displays high responsivity of 1759 A·W−1 and detectivity of 4.23×1015 Jones.The detectivity is thus far the highest for ZnO UV detectors prepared by the sol-gel method.The improved performance of the GD-modified detector is attributed to the p-n junction formed between the GD and the ZnO film.At dark, the p-n junction is formed between the ZnO film and the GD, which greatly decreases the dark current of the detector.Under UV illumination, photogenerated holes accumulate in the GD, reducing electron-hole recombination; thus, the photocurrent is significantly increased.Furthermore, desorption and absorption of oxygen on the ZnO surface are much reduced due to the GD attached on the ZnO surface, thus improving the response speed of the detector.However, the intensive distribution of GD slightly hinders the UV absorption of ZnO thin films, reducing the responsivity of the detector.Careful optimization shows that the use of 2T GD gives the best output, and the corresponding ZnO UV detector exhibits very good performance.Overall, this study demonstrates that using GD can effectively improve the performance of ZnO UV detector.

MSC2000:

• O647