物理化学学报 >> 2007, Vol. 23 >> Issue (08): 1252 -1256 .doi: 10.3866/PKU.WHXB20070821

研究简报 上一篇    下一篇

衬底温度对用RF-PECVD法制备的非晶硅薄膜光学性能影响

李世彬; 吴志明; 朱魁鹏; 蒋亚东; 李伟; 廖乃镘   

  1. 电子科技大学光电信息学院, 成都 610054; 电子薄膜与集成器件国家重点实验室, 成都 610054
  • 收稿日期:2007-01-18 修回日期:2007-04-24 发布日期:2007-08-03
  • 通讯作者: 吴志明 E-mail:zmwu@uest.edu.cn

Effect of Substrate Temperature on the Optical Properties of a-Si:H Films by RF-PECVD

LI Shi-Bin; WU Zhi-Ming; ZHU Kui-Peng; JIANG Ya-Dong; LI Wei; LIAO Nai-Man   

  1. School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China
  • Received:2007-01-18 Revised:2007-04-24 Published:2007-08-03
  • Contact: WU Zhi-Ming E-mail:zmwu@uest.edu.cn

摘要: 采用射频等离子增强化学气相沉积(RF-PECVD)工艺制备非晶硅(a-Si:H)薄膜, KBr衬底在175-275 ℃范围内变化, 用傅立叶红外光谱仪(FTIR)测试KBr衬底上的薄膜红外光谱峰随衬底温度的变化情况, 结合红外光谱峰的理论分析确定薄膜中氢含量随衬底温度的变化规律. 光谱式椭圆偏振仪中用Forouhi Bloomer (FB)模型拟合得到薄膜的折射率(n), 消光系数(k), 膜厚及光学禁带宽度(Eg), 并用扫描电镜(SEM)断面分析对椭偏仪测试结果的准确性进行验证. 根据Tauc公式推出薄膜的Eg和截止波长, 并和FB模型得到的结果进行了比较, Eg(FB)和Eg(Tauc)的差值在0.015 eV内.

关键词: 非晶硅, 光学常数, 光学禁带, 傅立叶红外光谱, 薄膜

Abstract: Hydrogenated amorphous silicon films were grown by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) and the substrate temperature of samples changed in the range of 175-275 ℃. Fourier-transform infrared spectrometer (FTIR) was used to characterize the infrared spectral feature of films deposited on KBr substrate. The hydrogen content of films was influenced by substrate temperature according to the FTIR spectra and theoretic analysis. The refractive index (n), extinction coefficient (k), thickness of films and optical band gap (Eg(FB)) were obtained through Forouhi Bloomer (FB) model in spectrum ellipsomet (SE). Appearance of fracture was analyzed by scanning electron microscopy (SEM) to make sure the result of filmthickness. The optical band gap (Eg(Tauc)) and cutoff wavelength were also deduced by Tauc formula, and the difference between Eg(FB) and Eg(Tauc) was within 0.015 eV.

Key words: Amorphous silicon, Optical constant, Optical band gap, FTIR, Thin film

MSC2000: 

  • O649