物理化学学报 >> 1999, Vol. 15 >> Issue (12): 1070-1075.doi: 10.3866/PKU.WHXB19991204

研究论文 上一篇    下一篇

[M(en)3]2Sn2Se6(M=Mn,Zn)的制备及其热稳定性

陈震, 王如骥   

  1. 福建师范大学实验中心,福州 350007|清华大学分析中心,北京 100084
  • 收稿日期:1999-01-04 修回日期:1999-05-04 发布日期:1999-12-15
  • 通讯作者: 陈震

Synthesis of Transition Metal Chalcogenide [M(en)3]2Sn2Se6(M=Mn,Zn) and Studies of Thermogravimeric Properties

Chen Zhen, Wang Ru-Ji   

  1. Experiment Center of the Fujian Normal University,Fuzhou 350007|Analysis Center,Tsinghua University,Beijing 100084
  • Received:1999-01-04 Revised:1999-05-04 Published:1999-12-15
  • Contact: Chen Zhen

摘要:

用有机溶剂热生长技术(Solvothermal Technique)制备过渡金属锰和锌硒化物[Mn(en)3]2Sn2Se6(Ⅰ), [Zn(en)3]2Sn2Se6(Ⅱ). 用单晶X射线衍射技术对其进行晶体结构分析. [Zn(en)3]2Sn2Se6样品的热分析结果表明, 该化合物的热分解分三步进行. 光学性质测试表明它们是半导体材料, [Mn(en)3]2Sn2Se6的能带隙为1.76eV. [Zn(en)3]2Sn2Se6的能带隙为2.49eV.

关键词: 金属硒化物, 晶体结构, 无机多聚物, 有机溶剂热生长技术

Abstract:

The solvothermal technique was used for the synthesis of [M(en) 3] 2Sn2Sn6(M=Mn,Zn), which contains a zintl anion, [Sn2Sn6]4- and a complex cation, [M(en) 3] 2+ .The crystal structure has been determined by signle crystal X ray diffraction techniques. Both compounds crystallize in orthorhombic, space group Pbca with unit cell dimensions a =1.5927(4)nm, b =1.2204(3)nm, c =1.9336(7)nm, V =3.758(2)nm 3, Z =4 for [Mn(en) 3] 2Sn 2Se 6;and a =1.5390(3)nm, b =1.1914(3)nm, c =1.9210(3)nm, V =3.522(1)nm 3, Z =4 for [Zn(en) 3] 2Sn 2Se 6.Optical studies performed on the powder sample suggested that both compounds are semiconductors with a band gap of 1.76eV for [Mn(en) 3] 2Sn 2Se 6,and 2.49eV for [Zn(en) 3] 2Sn 2Se 6.The result of TGA thermal analysis on [Zn(en) 3] 2Sn 2Se 6 indicated that the loss of enthylendiamine proceeded in three steps. The decomposition of [Zn(en) 3] 2Sn 2Se 6 produced ZnSe, SnSe and Se as the final residues.

Key words: Metal chalcogenides, Crystal structure, Inorganic polymer, Solvothermal technique