物理化学学报 >> 2003, Vol. 19 >> Issue (02): 97-99.doi: 10.3866/PKU.WHXB20030201

通讯    下一篇

金属-聚硅烷-硅结构的电容－电压特性

彭志坚;司文捷;谢茂浓;傅鹤鉴;苗赫濯   

  1. 清华大学材料科学与工程系,新型陶瓷与精细工艺国家重点实验室，北京　100084；四川大学物理系，四川大学化学系，成都　610064
  • 收稿日期:2002-09-13 修回日期:2002-11-12 发布日期:2003-02-15
  • 通讯作者: 彭志坚 E-mail:pengzhijian00@mails.tsinghua.edu.cn

C－V Characteristics of Metal-Polysilane-Silicon Structures

Peng Zhi-Jian;Si Wen-Jie;Xie Mao-Nong;Fu He-Jian;Miao He-Zhuo   

  1. State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing　100084;Department of Physics,Department of Chemistry, Sichun University, Chengdu　610064
  • Received:2002-09-13 Revised:2002-11-12 Published:2003-02-15
  • Contact: Peng Zhi-Jian E-mail:pengzhijian00@mails.tsinghua.edu.cn

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摘要： 设计了metal-polysilane-silicon (MPS)结构.首次发现MPS结构具有电容-电压（C－V）特性,许多MPS结构的C－V曲线平带电压为正,且其C－V特性与聚硅烷枝化度一致,即随着聚硅烷枝化度提高,MPS结构C－V曲线明显向电压轴正向漂移.聚硅烷MPS结构有望设计成测定聚硅烷枝化度装置.

关键词: 聚硅烷, MPS结构, C－V特性曲线, 平带电压, 枝化度

Abstract: Metal-polysilane-silicon(MPS) structures were designed in this investigation. It was first discovered that the MPS structures possessed capacitance-voltage(C－V) characteristics, and the C－V characteristics were consistent with the branching densities of the polysilanes, i.e., with the increase in branching densities, the C－V curves drifted more dramatically towards the positive direction of the electrical voltage axis. The MPS structures may be promising in designing devices for the measurement of the branching densities of the branched polysilanes. Many of the flat-band voltages of the MPS structures were positive, which played positive roles in semiconductor devices.

Key words: Polysilane, Metal-polysilane-silicon structure, C－V characteristic curve, Flat-band voltage, Branching density