物理化学学报 >> 2001, Vol. 17 >> Issue (12): 1112-1116.doi: 10.3866/PKU.WHXB20011211

研究简报 上一篇    下一篇

疏水型SiO2光学增透膜的制备

马建华;吴广明;程银兵;孙骐;王俊玲;沈军;王珏   

  1. 同济大学波耳固体物理研究所，上海　200092
  • 收稿日期:2001-06-11 修回日期:2001-07-27 发布日期:2001-12-15
  • 通讯作者: 马建华 E-mail:mjhling@263.net

Preparation of Hydrophobic Optical Silica Thin Film with Sol-gel Method

Ma Jian-Hua;Wu Guang-Ming;Cheng Yin-Bing;Sun Qi;Wang Jun-Ling;Shen Jun;Wang Jue   

  1. Pohl Institute of Solid State Physics,Tongji University,Shanghai　200092
  • Received:2001-06-11 Revised:2001-07-27 Published:2001-12-15
  • Contact: Ma Jian-Hua E-mail:mjhling@263.net

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摘要： 以正硅酸乙酯（TEOS）为有机醇盐前驱体，采用溶胶-凝胶技术，通过酸/碱二步法控制实验条件，结合三甲基氯硅烷（TMCS）对胶粒表面的修饰过程，制备出结构可控的疏水型SiO2薄膜.采用椭偏仪、FTIR、接触角测试仪、SEM等对薄膜的折射率、红外特性、接触角以及表面形貌等进行了测量.研究结果表明，疏水型SiO2薄膜的折射率在1.33～1.18之间连续可调;SiO2胶粒表面的亲水性－OH中的H已部分被非活性－Si(CH3)3基团取代;接触角由表面未修饰膜的40°左右增加到表面修饰膜的120°左右.

关键词: 溶胶-凝胶, SiO2, 表面修饰, 疏水薄膜

Abstract: Preparation of hydrophobic SiO2 thin film is reported.The solution is prepared by a acid/base 2-step method and then modified by TMCS (trimethylchlorosilane).Ellipsometry,FTIR,SEM,and contact angle instrument were used to measure the physical properties of the thin films.The results show that the refractive index of thin film is controlled between 1.33 and 1.18,OH groups on the surface of SiO2 particles have been partly replaced by CH3 groups,the contact angle is increased to 120 degree of modified films from 40 degree of unmodified films.

Key words: Sol-gel process, Silica, Surface modification, Hydrophobic films