物理化学学报 >> 1993, Vol. 9 >> Issue (06): 791-794.doi: 10.3866/PKU.WHXB19930613

研究论文 上一篇    下一篇

n-InP在Fe3+/Fe2+溶液中光脉冲暂态行为(IV)

钱道荪; 朱振华; 王平川   

  1. 上海交通大学应用化学系,上海 200240
  • 收稿日期:1992-05-25 修回日期:1992-10-20 发布日期:1993-12-15
  • 通讯作者: 钱道荪

Pulsed Light-induced Transient Behavior at n-InP Electrode in Fe3+/Fe2+(IV)

Qian Dao-Sun; Zhu Zhen-Hua; Wang Ping-Chuan   

  1. Department of Applied Chemistry, Shanghai Jiao Tong Univeristy, Shanghai 200240
  • Received:1992-05-25 Revised:1992-10-20 Published:1993-12-15
  • Contact: Qian Dao-Sun

摘要: 研究了波长、温度及表面处理对n-InP光脉冲暂态行为的影响. 结果表明, 波长对时间常数无影响; 随着温度升高, 峰值下降, 衰减变快. 讨论了表面处理的影响, 并对实验结果作了必要的解释.

关键词: 磷化铟, 半导体电极, 光电化学, 光脉冲暂态技术

Abstract: In this work, the influence of temperature, wavelength and surface treatment on the transient behavior of n-InP in Fe~(3+)/Fe~(2+) solution with pulsed light technique is investigated.
The wavelength does not influence the time constant of the transient curve. The peak pho-tovoltage decreases when the temperature increases, it is similar to the silicon cell. The decay of photovoltage-time curve is rapid with temperature because of increasing of the back diffusion rate. If the electrode is polished by emerg parper, the peak valus drops and the decay of the curve is very rapid, it can be restored by treatment with H_2SO_4+H_2O_2 (1:1) etching solution continuousely, this phenomenon can be explained by surface states.

Key words: Indium phosphide, Semiconducting electrode, Photoelectrochemistry, Pulsed light transient technique