物理化学学报 >> 2005, Vol. 21 >> Issue (10): 1127-1131.doi: 10.3866/PKU.WHXB20051013

研究论文 上一篇    下一篇

多壁碳纳米管的掺氮改性及场效应管特性研究

周晓龙; 柴扬; 李萍剑; 潘光虎; 孙晖; 申自勇; 张琦锋; 吴锦雷   

  1. 北京大学电子学系, 北京 100871
  • 收稿日期:2005-03-14 修回日期:2005-05-10 发布日期:2005-10-15
  • 通讯作者: 吴锦雷 E-mail:jlwu@pku.edu.cn

Fabrication of Nitrogen-doped Multi-walled Carbon Nanotube and Their Field Effect Transistor Properties

ZHOU Xiao-long; CHAI Yang; LI Ping-jian; PAN Guang-hu; SUN Hui; SHEN Ziyong; ZHANG Qi-feng; WU Jin-lei   

  1. Department of Electronics, Peking University, Beijing 100871
  • Received:2005-03-14 Revised:2005-05-10 Published:2005-10-15
  • Contact: WU Jin-lei E-mail:jlwu@pku.edu.cn

摘要: 以二茂铁为前驱体, 提供催化剂与部分碳源, 三聚氰提供氮源与另外一部分碳源, 在硅基底上制备出了碳纳米管阵列. 碳纳米管为多壁结构, 单根碳纳米管的平均直径为50 nm. 碳纳米管的X射线光电子谱(XPS)在398.4 eV处出现特征峰, 表明为氮掺杂的碳纳米管. 用其制备的场效应管在室温大气环境下稳定地表现为n型场效应特性, 并且具有非常低的关闭状态电流(off-state current)以及良好的负门电压对漏极电流的抑制作用, 单位源漏偏压下漏极电流为100 pA量级. 实验中采用了源/漏电极不对称的绝缘层结构, 使得门电压对源漏两极的电场调制也不对称, 从而实现了对漏电极的门电压调制.

关键词: 碳纳米管, 掺杂, 场效应管(FET), 输运

Abstract: Multi- walled carbon nanotube (CNT) arrays have been produced on silicon substrate by a one-step route based on the pyrolysis of mixture of ferrocene and melamine under well-chosen synthesis condition. Transmission electron microscope (TEM) and scanning electron microscope (SEM) studies showed the products were all multi-walled CNTs that are about 50 nm in diameter. X-ray photoelectron spectroscopy study revealed that the CNTs were nitrogen-doped. Field effect transistors (FETs) base on the nitrogen-doped MWCNT in an asymmetry- source/drain-electrodes configuration were further fabricated. And electrical transport measurements exhibited typical n-type behavior. The off-state current through the FETs is extremely low, about 100 pA in order. The asymmetry isolation layer between the source/drain electrodes and the gate used in the experiment results in asymmetric modulation of gate electrostatic field to source electrode and drain electrode. Therefore solo gate electrostatic field modulation to the drain electrode is realized.

Key words: Carbon nanotubes, Nitrogen doping, Field effect transistor, Transport