物理化学学报 >> 2004, Vol. 20 >> Issue (06): 561-564.doi: 10.3866/PKU.WHXB20040601

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DPA(TCNQ)2的烧孔阈值电压对脉宽的依赖关系

于学春;张然;彭海琳;张莹莹;刘忠范   

  1. 北京大学化学与分子工程学院，北京大学纳米科学与技术研究中心，北京　100871
  • 收稿日期:2004-02-04 修回日期:2004-03-11 发布日期:2004-06-15
  • 通讯作者: 刘忠范 E-mail:liuzf@cnst.pku.edu.cn

The Dependence of Threshold Voltage on Pulse Duration for DPA(TCNQ)2

Yu Xue-Chun;Zhang Ran;Peng Hai-Lin;Zhang Ying-Ying;Liu Zhong-Fan   

  1. Center for Nanoscale Science and Technology(CNST), College of Chemistry ＆ Molecular Engineering, Peking University, Beijing　100871
  • Received:2004-02-04 Revised:2004-03-11 Published:2004-06-15
  • Contact: Liu Zhong-Fan E-mail:liuzf@cnst.pku.edu.cn

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摘要： 合成了一种新的二元电荷转移复合物DPA(TCNQ)2（二丙胺-7,7,8,8-四氰基对亚甲基苯醌)，并得到了其单晶ab面的STM高分辨图像，表面晶格常数与体相晶格常数的XRD数据完全一致.用STM成功地写入了5×5的信息点阵，并在5.1 μm×5.1 μm的面积上写入更大规模的信息点阵，写入的可靠性和稳定性都很高.实验发现，烧孔阈值电压强烈依赖于脉宽,这一现象不支持场致蒸发的机理.理论分析表明，它支持热化学烧孔的机理.

关键词: DPA(TCNQ)2(dipropylamine tetracyanoquinodimethane）, 高分辨STM图像, 场致蒸发, 热化学烧孔机理

Abstract: A binary charge transfer complex—dipropylamine tetracyanoquinodimethane(DPA(TCNQ)2) was synthesized. Using STM we studied the surface topography of the single crystal and observed the molecular arrangement of the ab plane. Section analysis indicates that the surface lattice constants are in nice agreement with the XRD data of the bulk lattice constants. We successfully wrote information dot array on the crystal surface with a writing probability of 100％. Experimental results indicate that pulse width has strong influence on the threshold voltage for hole formation. This result does not support the typical field-induced evaporation mechanism but strongly supports the thermochemical hole burning (THB) mechanism.

Key words: DPA(TCNQ)2, STM high resolution image, Field-induced evaporation, Thermochemical hole burning mechanism