物理化学学报 >> 1995, Vol. 11 >> Issue (08): 730-733.doi: 10.3866/PKU.WHXB19950812

研究简报 上一篇    下一篇

铜在ρ-Si上激光诱导电沉积过程的研究

姚素薇,张国庆,郭鹤桐,龚正烈   

  1. 天津大学应用化学系|天津 300072|天津理工学院物理系|天津 300191
  • 收稿日期:1994-07-04 修回日期:1994-11-03 发布日期:1995-08-15
  • 通讯作者: 姚素薇

An Investigation on the Process of Laser Induced Electrodeposition of Copper on ρ-type Silicon

Yao Su-Wei,Zhang Guo-Qing,Guo He-Tong,Gong Zheng-Lie   

  1. Department of Applied Chemistry,Tianjin University,Tianjin 300072|Department of Physics,Tianjin Institute of Technology,Tianjin 300191
  • Received:1994-07-04 Revised:1994-11-03 Published:1995-08-15
  • Contact: Yao Su-Wei

PDF

2717

赞

关键词: ρ型硅, 激光, 电沉积, 铜

Abstract:

Pretreatment of the substrate has obvious influence on the deposition. Both valence and conduction band reactions which cause the electrodeposition of Cu2+ can take place. Since ECu2+, the most probable energy level of Cu2+ is higher than the Ev of p-Si, a process including thermal excitation of electron from Ev to surface states level, and then to Cu2+ may be the probable charge transfer mechanism. During the laser induced selective deposition process, Iph ~ t curves are used to monitor the nuclei formation and growth. Besides an exponential decline in Iph, which is due to an increase in thickness of the deposits, some discontinuous current peaks owing to new nuclei formation on bare substrate are observed.

Key words: ρ-type silicon, Laser, Electrodepostion, Copper