物理化学学报 >> 2003, Vol. 19 >> Issue (07): 641-646.doi: 10.3866/PKU.WHXB20030715

研究论文 上一篇    下一篇

Ti/ZrN2/Si薄膜界面扩散反应的研究

王莉;殷木省;朱永法   

  1. 清华大学化学系，北京　100084
  • 收稿日期:2002-12-26 修回日期:2003-03-17 发布日期:2003-07-15
  • 通讯作者: 朱永法 E-mail:zhuyf@chem.tsinghua.edu.cn

A Study of Interface Diffusion and Reaction of Ti/ZrN2/Si Film

Wang Li;Yin Mu-Sheng;Zhu Yong-Fa   

  1. Department of Chemistry, Tsinghua University, Beijing　100084
  • Received:2002-12-26 Revised:2003-03-17 Published:2003-07-15
  • Contact: Zhu Yong-Fa E-mail:zhuyf@chem.tsinghua.edu.cn

PDF

3139

赞

摘要： 利用直流磁控反应溅射法在Si基底上制备了Ti/ZrN2/Si多层薄膜，利用俄歇深度剖析和线形分析研究了真空热处理前后膜层间的界面状态及相互作用.研究结果表明，Ti膜和ZrN2膜均在沉积过程中发生了界面扩散作用，真空热处理可以显著地增强Ti/ZrN2/Si膜层间的界面扩散和化学反应，并分别在界面层生成了TiNx和SiNx等物种.

关键词: 界面扩散反应, Ti/ZrN2/Si, 俄歇电子能谱

Abstract: Ti/ZrN2 multiplayer was deposited on silicon wafer using DC magnetron sputtering method. Interface diffusion and chemical states at interfaces were investigated using line shape analysis along with depth profile analysis of Auger electron spectroscopy (AES). Interface diffusion was performed during deposition of thin film and can be intensified by thermal treatment in vacuum. Interface reaction also can be promoted by thermal treatment, and TiNx and SiNx species were formed at interface respectively.

Key words: Interface diffusion and reaction, Ti/ZrN2/Si, Auger electron spectroscopy(AES)