物理化学学报 >> 1996, Vol. 12 >> Issue (10): 900-904.doi: 10.3866/PKU.WHXB19961008

研究论文 上一篇    下一篇

Cr,Fe,Cu/Al2O3界面化学结构的光电子能谱

任海兰,刘韩星,张汉林,欧阳世翕,王典芬   

  1. 武汉工业大学新材料研究所,武汉 430070|武汉工业大学测试中心,武汉 430070
  • 收稿日期:1996-03-19 修回日期:1996-06-10 发布日期:1996-10-15
  • 通讯作者: 刘韩星

The Chemical Structure of Cr,Fe,Cu/Al2O3 Interface by XPS

Ren Hai-Lan,Liu Han-Xing,Zhang Han-Lin,Ouyang Shi-Xi,Wang Dian-fEn   

  1. Adveanced Materials Research Institute,Wuhan University of Technology,Wuhan 430070|The Center for Materials Research and Analysis,Wuhan University of Technology,Wuhan 430070
  • Received:1996-03-19 Revised:1996-06-10 Published:1996-10-15
  • Contact: Liu Han-Xing

摘要:

应用X-射线光电子能谱,通过离子刻蚀,原位研究第四周期过渡金属与氧化铝所形成界而的化学状态.结果表明,Cr、Fe在界面处有不同程度的氧化,氧化程度Cr>Fe,而Cu则无明显氧化.化学成份的定量分析表明,界面过渡层的厚度与界面化学反应强弱直接相关.

关键词: 金属-陶瓷界面, 光电子能谱, 化学结构

Abstract:

The chemical states of metal-ceramic interface were studied by XPS accompany the ion etching in situ. The results showed that Cr and Fe were both oxidized at the interfaces, and the degree of the oxidization was Cr>Fe, while Cu was not oxidized. The quantity analysis showed that the thickness of the interfaces had a direct relations with the chemical reaction.

Key words: Metal-ceramic interface, XPS, Chemical structure