物理化学学报 >> 2010, Vol. 26 >> Issue (02): 299-303.doi: 10.3866/PKU.WHXB20100226

电化学 上一篇    下一篇

氮掺杂二氧化钛-氧化镍双层薄膜的光电致色特性

蒋磊, 黄辉, 王春涛, 张文魁, 甘永平, 陶新永   

  1. 浙江工业大学化学工程与材料学院, 杭州 310014; 浙江海洋学院机电工程学院, 浙江 舟山 316000
  • 收稿日期:2009-08-17 修回日期:2009-11-11 发布日期:2010-01-26
  • 通讯作者: 黄辉 E-mail:msechem@zjut.edu.cn

Photoelectrochromic Properties of TiO2-xNx/NiO Bilayer Thin Films

JIANG Lei, HUANG Hui, WANG Chun-Tao, ZHANG Wen-Kui, GAN Yong-Ping, TAO Xin-Yong   

  1. College of Chemical Engineering and Materials Science, Zhejiang University of Technology, Hangzhou 310014, P. R. China; College of Electromechanical Engineering, Zhejiang Ocean University, Zhoushan 316000, Zhejiang Province, P. R. China
  • Received:2009-08-17 Revised:2009-11-11 Published:2010-01-26
  • Contact: HUANG Hui E-mail:msechem@zjut.edu.cn

摘要:

以金属钛为靶材、O2/N2/Ar混合气氛为溅射气体, 在导电玻璃(ITO)表面磁控溅射一层薄膜, 再经300-500 ℃退火处理制备了氮掺杂TiO2薄膜. 采用X射线衍射(XRD)、X光电子能谱(XPS)、扫描电子显微镜(SEM)和紫外-可见吸收光谱等对薄膜的微观结构、光学特性和光电化学性能等进行了研究. 进而采用化学沉积的方法在TiO2-xNx薄膜表面沉积上一层多孔NiO薄膜, 研究表明, 制备的ITO/TiO2-xNx/NiO双层薄膜具有明显的光电致色特性, 400 ℃退火处理的氮掺杂TiO2薄膜具有最高的光电流响应, 经氙灯照射1 h后, 薄膜从无色变成棕色, 500 nm波长处光透过率从79.0%下降至12.6%.

关键词: 光电致色, 氮掺杂TiO2, 氧化镍, 光电化学性能, 薄膜

Abstract:

N-doped TiO2 films were prepared on indium tin oxide(ITO) conducting glass by dc-reactive magnetron sputtering using a Ti target in an O2/N2/Ar mixture gas in combination with heat-treatment at 300-500 ℃. The microstructure, optical and photoelectrochemical properties of the as-formed filmswere characterized byX-ray diffraction (XRD), X-ray photoelectron spectroscopy(XPS), scanning electron microscopy(SEM) and UV-Vis transmittance spectrum. Highly porous NiO was deposited onto the N-doped TiO2 layer by chemical bath deposition to obtain ITO/TiO2-xNx/NiO bilayer thin films and they exhibited excellent and noticeable photoelectrochromism. The TiO2-xNx film annealed at 400 ℃ showed the highest photocurrent response. The color of films changed from colorless to brown and the transmittance varied from 79.0% to 12.6% at 500 nmafter 1 h of irradiation.

Key words: Photoelectrochromism, N-doped TiO2, NiO, Photoelectrochemical property, Thin film

MSC2000: 

  • O646