物理化学学报 >> 2010, Vol. 26 >> Issue (05): 1202-1206.doi: 10.3866/PKU.WHXB20100509

电化学 上一篇    下一篇

MgO掺杂Ce0.9Sm0.1O2-δ固体电解质的结构和电性能

宁德争, 周德凤, 夏燕杰, 赵桂春, 孟健   

  1. 长春工业大学化学与生命科学学院, 长春 130012; 中国科学院长春应用化学研究所, 稀土化学与物理国家重点实验室, 长春 130022
  • 收稿日期:2009-10-21 修回日期:2009-12-18 发布日期:2010-04-29
  • 通讯作者: 周德凤 E-mail:defengzhou65@126.com; jmeng@ciac.jl.cn

Structure and Electrical Properties of MgO-Doped Ce0.9Sm0.1O2-δ Based Solid Electrolytes

NING De-Zheng, ZHOU De-Feng, XIA Yan-Jie, ZHAO Gui-Chun, MENG Jian   

  1. School of Chemistry and Life Science, Changchun University of Technology, Changchun 130012, P. R. China; State Key Laboratory of Rare Earth Chemistry and Physics, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, P. R. China
  • Received:2009-10-21 Revised:2009-12-18 Published:2010-04-29
  • Contact: ZHOU De-Feng E-mail:defengzhou65@126.com; jmeng@ciac.jl.cn

摘要:

采用溶胶-凝胶法合成SiO2含量为5.0×10-4 (w)的Ce0.9Sm0.1O2-δ(SDC)粉体(SDCSi), 并将0-3.0%(x)MgO分别加入到SDCSi陶瓷粉体中, 用X射线衍射(XRD)和场发射扫描电子显微镜(FE-SEM)对材料进行表征, 用交流阻抗谱(AC)测试材料的电性能. 结果表明: MgO掺杂能使SDCSi的烧结温度降低100-200 ℃, 提高陶瓷材料的致密度; 清除或降低陶瓷材料晶界处SiO2杂质的有害影响, 显著提高晶粒/晶界电导率和总电率; MgO掺杂到SDCSi具有烧结助剂和晶界杂质清除剂的双重作用.

关键词: 固体电解质, MgO掺杂, 清除剂, 电导率

Abstract:

The precursor powder of Ce0.9Sm0.1O2-δ(SDC) containing 5.0×10-4 (w) SiO2 as an impurity (SDCSi) was prepared by the sol-gelmethod and 0-3.0%(molar fraction, x)MgOwas added to the SDCSi powder. The characterizations focused on phase structure, sintering behavior, relative density, electrical conductivity of all the samples were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and AC impedance spectroscopy. We find that MgO can reduce the sintering temperature about 100-200 ℃ and increase the relative density of the ceramics. The grain boundary conduction increased markedly for the 1.0%(x) MgO-loaded SDCSi ceramics as MgO can mitigate the harmful effects of the SiO2 impurity. These investigations have indicated that MgO is shown to be an effective sintering aid and a new scavenger of the grain boundary synchronously.

Key words: Solid electrolyte, MgO-doping, Scavenger, Electrical conductivity

MSC2000: 

  • O649