物理化学学报 >> 2013, Vol. 29 >> Issue (05): 1021-1027.doi: 10.3866/PKU.WHXB201303043

电化学和新能源 上一篇    下一篇

In2O3敏化ZnO纳米棒阵列的性能及其光电催化活性

闫伟平, 王德军, 陈礼平, 卢永春, 谢腾峰, 林艳红   

  1. 吉林大学化学学院, 长春 130012
  • 收稿日期:2012-12-20 修回日期:2013-03-01 发布日期:2013-04-24
  • 通讯作者: 林艳红 E-mail:linyh@jlu.edu.cn
  • 基金资助:

    国家自然科学基金(21173103, 51172090); 吉林省科技发展计划项目(201115012)和吉林大学研究生创新项目(20121046)资助

Properties and Photoelectrocatalytic Activity of In2O3-Sensitized ZnO Nanorod Array

YAN Wei-Ping, WANG De-Jun, CHEN Li-Ping, LU Yong-Chun, XIE Teng-Feng, LIN Yan-Hong   

  1. College of Chemistry, Jilin University, Changchun 130012, P. R. China
  • Received:2012-12-20 Revised:2013-03-01 Published:2013-04-24
  • Supported by:

    The project was supported by the National Natural Science Foundation of China (21173103, 51172090), Science and Technology Developing Funding of Jilin Province, China (201115012), and Graduate Innovation Fund of Jilin University, China (20121046).

摘要:

以掺氟SnO2 (FTO)导电玻璃为基底, 采用水热法制备了ZnO纳米棒阵列. 通过In(NO3)3水溶液水洗的方法, 合成了In2O3敏化ZnO纳米棒阵列光催化剂. 采用场发射扫描电子显微镜(FESEM), X射线能谱(EDX), X射线衍射(XRD)及紫外-可见漫反射光谱(UV-Vis DRS)对样品的形貌、结构、组成、晶相等进行一系列的表征. 以罗丹明B (RhB)为目标降解物, 探究了In2O3敏化ZnO 纳米棒阵列光电催化活性. 采用场诱导表面光伏技术(FISPV)研究了不同含量的In2O3敏化ZnO纳米棒阵列在光照射下的光生电荷行为. 结合电化学工作站检测不同样品的光电流, 随着In2O3敏化量的改变, 光电流和开路电压也随之改变. 并探讨了In2O3敏化ZnO纳米棒阵列光生电荷行为与光电催化活性之间的关系. 结果表明, 适量In2O3敏化的ZnO光催化剂在可见光下2 h内对罗丹明B的降解效率达到95%, 是单纯ZnO纳米棒阵列的2.4倍.

关键词: In2O3敏化ZnO, 纳米棒阵列, 光电流密度-电位, 光电流, 挡光-照光, 表面光电压, 可见光光电催化活性

Abstract:

In2O3-sensitized ZnO nanorod array films were prepared in a two-step aqueous process on fluorine-doped tin oxide (FTO) substrates. Field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), field-induced surface photovoltage (FISPV), and UV-Vis diffuse reflectance spectroscopy (UV-Vis DRS) were used to characterize films. The influence of In2O3 content on the transfer characteristics of photoinduced charge carriers is discussed based on photovoltage response. The photoelectrocatalytic degradation efficiency of In2O3-sensitized ZnO nanorod array films was monitored using UV-Vis spectrometer. The photoelectrocatalytic activity of ZnO nanorod array and In2O3-sensitized ZnO nanorod array were evaluated from the degradation efficiency of rhodamine B (RhB). The effect of the In2O3-sensitized ZnO heterostructure on photoinduced electrons was investigated using the electrochemical workstation and the relationship between the photoinduced electron behavior and the photoelectrocatalytic process. Aqueous RhB was more efficiently degraded by the In2O3-sensitized ZnO nanorod array (visible light, applied bias voltage, 2 h), and the efficiency of the In2O3-sensitized array (95%) was 1.4 times higher than that of pure ZnO.

Key words: In2O3-sensitized ZnO, Nanorod array, Photocurrent density-potential, Photocurrent, On-off illumination, Surface photovoltage, Visible-light photoelectrocatalytic activity

MSC2000: 

  • O643