具有SiC缓冲层的Si衬底上直接沉积碳原子生长石墨烯
唐军, 康朝阳, 李利民, 徐彭寿
Direct Graphene Growth by Depositing Carbon Atoms on Si Substrate Covered by SiC Buffer Layers
TANG Jun, KANG Chao-Yang, LI Li-Min, XU Peng-Shou
物理化学学报 . 2011, (12): 2953 -2959 .  DOI: 10.3866/PKU.WHXB20112953