Acta Phys. -Chim. Sin. ›› 1986, Vol. 2 ›› Issue (01): 6-12.doi: 10.3866/PKU.WHXB19860102
• ARTICLE •
Yu Chunying; Chen Yixuan; Sheng Shishan; Li Wenzhao
Electric property across the Pt film-TiO_2 and Pt film-ZnO interface was characterized by the Ⅰ-Ⅴ curves. It was seen clearly that by H_2 treatment at high temperature the original rectifying property of the metal-semiconductor junction was changed into ohmic resistance contact. Electron exchange capability at the Pt film-TiO_2 and Pt-ZnO surface was measured electrochemically by making contact with a solution of Fe(CN)_6~(4-)/Fe(CN)_6~(3-). It was illustrated that the H_2 treated SMSI sample was much more feasible to charge transfer than the non-SMSI ones and it worked well either anodically or cathodically, analogous to the metallic Pt.By Auger depth profiling it was demonstrated that by heating Pt film-TiO_2 in H_2 interdiffusion at the metal-semiconductor interface happened, as a consequence the interfacial energy barrier for electron transfer was diminished and the charge transfer process greatly enhanced.
Yu Chunying; Chen Yixuan; Sheng Shishan; Li Wenzhao. STUDIES ON METAL-SEMICONDUCTOR INTERACTION: THE EFFECT OF THE INTERFACIAL STRUCTURE ON THE ELECTROCHEMICAL BEHAVIOR OF Pt—TiO2 AND Pt-ZnO[J].Acta Phys. -Chim. Sin., 1986, 2(01): 6-12.
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