Abstract: Electric property across the Pt film-TiO_2 and Pt film-ZnO interface was characterized by the Ⅰ-Ⅴ curves. It was seen clearly that by H_2 treatment at high temperature the original rectifying property of the metal-semiconductor junction was changed into ohmic resistance contact.
Electron exchange capability at the Pt film-TiO_2 and Pt-ZnO surface was measured electrochemically by making contact with a solution of Fe(CN)_6~(4-)/Fe(CN)_6~(3-). It was illustrated that the H_2 treated SMSI sample was much more feasible to charge transfer than the non-SMSI ones and it worked well either anodically or cathodically, analogous to the metallic Pt.
By Auger depth profiling it was demonstrated that by heating Pt film-TiO_2 in H_2 interdiffusion at the metal-semiconductor interface happened, as a consequence the interfacial energy barrier for electron transfer was diminished and the charge transfer process greatly enhanced.