Acta Phys. -Chim. Sin. ›› 2003, Vol. 19 ›› Issue (02): 97-99.doi: 10.3866/PKU.WHXB20030201
• Communication •
Peng Zhi-Jian;Si Wen-Jie;Xie Mao-Nong;Fu He-Jian;Miao He-Zhuo
Metal-polysilane-silicon(MPS) structures were designed in this investigation. It was first discovered that the MPS structures possessed capacitance-voltage(C－V) characteristics, and the C－V characteristics were consistent with the branching densities of the polysilanes, i.e., with the increase in branching densities, the C－V curves drifted more dramatically towards the positive direction of the electrical voltage axis. The MPS structures may be promising in designing devices for the measurement of the branching densities of the branched polysilanes. Many of the flat-band voltages of the MPS structures were positive, which played positive roles in semiconductor devices.
C－V characteristic curve,
Peng Zhi-Jian;Si Wen-Jie;Xie Mao-Nong;Fu He-Jian;Miao He-Zhuo. C－V Characteristics of Metal-Polysilane-Silicon Structures[J].Acta Phys. -Chim. Sin., 2003, 19(02): 97-99.
Add to citation manager EndNote|Reference Manager|ProCite|BibTeX|RefWorks