Acta Phys. -Chim. Sin. ›› 2004, Vol. 20 ›› Issue (06): 565-568.doi: 10.3866/PKU.WHXB20040602

• Communication • Previous Articles     Next Articles

Influence of Decomposition Temperature on the Threshold Voltage for a Series of Charge Transfer Complexes

Yu Xue-Chun;Peng Hai-Lin;Zhang Ran;Zhang Ying-Ying;Liu Zhong-Fan   

  1. Center for Nanoscale Science and Technology(CNST), College of Chemistry & Molecular Engineering, Peking University, Beijing 100871
  • Received:2004-02-03 Revised:2004-03-11 Published:2004-06-15

Abstract: A series of charge transfer complexes containing iodine were synthesized and the thermochemical hole burning properties of these materials were investigated. Experimental results suggest that dot array can be written on the crystal surface of all these materials using scanning tunneling microscope. It was found that the decomposition temperature has remarkable influence on the threshold voltage for hole burning. This results from the fact that, the activation energy has strong influence on the hole burning reaction rate, and the decomposition temperature is a measure of the activation energy. The influence of decomposition temperature on the threshold voltage is consistent with the principle of material design of thermochemical hole burning.

Key words: Charge transfer complex, Threshold voltage, Decomposition temperature,  Thermochemical hole burning reaction, Activation energy