Acta Phys. -Chim. Sin. ›› 2005, Vol. 21 ›› Issue (01): 10-15.doi: 10.3866/PKU.WHXB20050103

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The Preparation and Gas-sensing Properties of Ga2O3-NiO Complex Oxide by Sol-gel Method

GE Xiu-Tao;FANG Da-Ru;LIU Xing-Qin   

  1. Department of Chemistry, Chuzhou University, Anhui 239012; Department of Materials Science and Engineering University of Science and Technology of China, Hefei 230026
  • Received:2004-05-10 Revised:2004-08-02 Published:2005-01-15
  • Contact: GE Xiu-Tao

Abstract: Ga2O3-NiO Complex Oxide gas-sensing materials were prepared by sol-gel method. Effects of heat-treatment temperature and different n(Ni2+) : n(Ga3+) ratios on the phase constituents were characterized by XRD, IR and ICP, respectively. The conductance-temperature and gas-sensing properties of Ga2O3-NiO were investigated. The results demonstrate that pure phase NiGa2O4 can be obtained when the ratio of Ni2+ to Ga3+(n(Ni2+) : n(Ga3+)) is 0.7~0.9 : 2 and heat-treatment is carried out at 800 ℃ for 4 hours. Because of the reaction GaNi×→GaNi’+h●, NiGa2O4 is a p-type semiconductor and exhibits high sensitivity and good selectivity to C2H5OH.

Key words: Sol-gel, NiGa2O4, Conductance, C2H5OH, Gas-sensing properties