Acta Phys. -Chim. Sin. ›› 2006, Vol. 22 ›› Issue (04): 507-512.doi: 10.3866/PKU.WHXB20060423

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Concentration Protile of Etchant Measured by Microelectrode Technique in the Process of Chemical Micromachining

TANG Jing;MA Xin-Zhou;HE Hui-Zhong;ZHANG Li;LIN Mi-Xuan;QU Dong-Sheng2 DING Qing-Yong;SUN Li-Ning   

  1. Depeartment of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P. R. China; The Institute of Robots, Harbin Institute of Technology, Harbin 150001, P. R. China
  • Received:2005-09-27 Revised:2005-11-14 Published:2006-04-10
  • Contact: TANG, Jing E-mail:jingtang@xmu.edu.cn

Abstract: A carbon-disk microelectrode was used to investigate the surface concentration profile of etchant Br2, which was electrogenerated on the Pt working electrode. The steady state reducing currents of Br2 at different distances away from the Pt electrode was measured. The concentration profile was estimated from the current-distance variation curves as a function of different sampling times. Experimentally determined concentration profiles are in good agreement with those estimated from the microetching results. The microelectrode technique has offered a good method to choose suitable etching solution for chemical micromachining.

Key words: Confined etchant layer technique (CELT), Microelectrode, L-cystine, GaAs, Concentration profile