Acta Phys. -Chim. Sin. ›› 2007, Vol. 23 ›› Issue (01): 111-115.doi: 10.3866/PKU.WHXB20070123

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Preparation and Photoelectrochemical Properties of Bi2WO6 Films with Visible Light Response

ZHANG Shi-Cheng;YAO Wen-Qing;ZHU Yong-Fa;SHI Li-Yi   

  1. Department of Chemistry, Tsinghua University, Beijing 100084, P. R. China; Department of Environmental Science & Engineering, Fudan University, Shanghai 200433, P. R. China; Research Center of Nano-Science and Nano-Technology, Shanghai University, Shanghai 200444, P. R. China
  • Received:2006-07-03 Revised:2006-08-01 Published:2007-01-08
  • Contact: ZHANG Shi-Cheng;ZHU Yong-Fa E-mail:zhangsc@fudan.edu.cn;zhuyf@tsinghua.edu.cn

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Abstract: The Bi2WO6 films on ITO glass substrates have been prepared from amorphous complex precursor by dip-coating technique. The structure and photoelectrochemical properties of the films were investigated by using FE-SEM, XRD, Raman, DRS, IPCE (incident photon-to-current conversion efficiency) and photocurrent action curves. The crystalline Bi2WO6 film could be obtained above 450 ℃, which was composed of Bi2WO6 nanoparticles growing along (131) face. The size of Bi2WO6 nanoparticles was increased with the calcination temperature, and the space between the nanoparticles also increased. Under the visible light (λ>400 nm) irradiation, the photocurrent was generated from the ITO/Bi2WO6 photo-electrode, with the photocurrent density linear to the light intensity. The photocurrent density and IPCE can be controlled by modifying the surface structure of Bi2WO6 films, which can be achieved by changing the preparation conditions (such as calcination temperature).

Key words: Bi2WO6 films, Photoelectrochemistry, Visible light, Amorphous complex precursor, Photocatalysis