Acta Phys. -Chim. Sin. ›› 2008, Vol. 24 ›› Issue (02): 355-358.doi: 10.3866/PKU.WHXB20080230

• Note • Previous Articles    

Catalytic Synthesis and Luminescent Characteristics of GaN Nanorods

CHEN Jin-Hua; XUE Cheng-Shan; ZHUANG Hui-Zhao; LI Hong; QIN Li-Xia; YANG Zhao-Zhu   

  1. Institute of Semiconductors, Shandong Normal University, Jinan 250014, P. R. China
  • Received:2007-09-12 Revised:2007-10-18 Published:2008-01-26
  • Contact: XUE Cheng-Shan E-mail:xuechengshan@sdnu.edu.cn

Abstract: Rare earth metal seed Tb was employed for the growth of GaNnanorods. GaNnanorods were synthesized successfully through ammoniating Ga2O3/Tb films sputtered on Si(111) substrates. X-ray diffraction results indicated that the nanorods were hexagonal GaN. Observations using scanning electron microscopy and high-resolution transmission electron microscopy showed that GaN was of single-crystal nanorod structure, with diameter 50-150 nm and length about 10 μm. Photoluminescence spectrum showed a strong UV emission peak at 368.6 nm, indicating that the products possess good luminescent characteristics. The growth mechanismof GaN nanorods was also discussed.

Key words: GaN, Nanorods, Single crystal, Luminescence

MSC2000: 

  • O644