Mg掺杂GaN纳米线的结构及其特性

doi:10.3866/PKU.WHXB20090120

Acta Phys. -Chim. Sin. ›› 2009, Vol. 25 ›› Issue (01): 113-115.doi: 10.3866/PKU.WHXB20090120

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Structure and Characterization of Mg-Doped GaN Nanowires

XUE Cheng-Shan; ZHANG Dong-Dong; ZHUANG Hui-Zhao; HUANG Ying-Long; WANG Zou-Ping; WANG Ying

Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan 250014, P. R. China

Received:2008-07-17 Revised:2008-09-16 Published:2008-12-31
Contact: XUE Cheng-Shan E-mail:xuechengshan@sdnu.edu.cn

Abstract

Abstract: Large-scale Mg-doped GaN nanowires were synthesized by ammoniating Mg:Ga2O3 thin films at 850 ℃ which were deposited on the Si substrate using the resembling Delta doping method. These GaN nanowires were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transformed infrared (FTIR) spectroscopy and high resolution transmission electron microscopy (HRTEM). The results indicated that nanowires were hexagonal wurzite GaN single crystals. The diameter of nanowires was in the range of 35-50 nm with lengths of up to several tens of micrometers.

Key words: GaN, Nanowires, Single crystal, Mg-doped

MSC2000:

O647

XUE Cheng-Shan; ZHANG Dong-Dong; ZHUANG Hui-Zhao; HUANG Ying-Long; WANG Zou-Ping; WANG Ying. Structure and Characterization of Mg-Doped GaN Nanowires[J].Acta Phys. -Chim. Sin., 2009, 25(01): 113-115.

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Structure and Characterization of Mg-Doped GaN Nanowires

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