Acta Phys. -Chim. Sin. ›› 2010, Vol. 26 ›› Issue (01): 244-248.doi: 10.3866/PKU.WHXB20100124

• PHYSICAL CHEMISTRY OF MATERIALS • Previous Articles     Next Articles

Synthesis and Optoelectrochemical Properties of ZnS:Co Semiconductor Quantum Dots

YANG Xu, ZHOU Hong, SHEN Bin, ZHANG Ling   

  1. School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, P. R. China; Biochemical and Environmental Engineering College, Nanjing Xiaozhuang University, Nanjing 211171, P. R. China
  • Received:2009-06-26 Revised:2009-11-03 Published:2009-12-29
  • Contact: SHEN Bin E-mail:binshen2000@hotmail.com

Abstract:

Co2+ doped ZnS semiconductor quantum dots (QDs) were synthesized in an aqueous solution at 70 ℃ using citric acid (CA) or mercaptopropionic acid (MPA) as a stabilizer. The as-prepared undoped and the Co2+ doped ZnS quantum dots (QDs) were characterized by UV-Vis spectrum, photoluminescence (PL) spectrum, X-ray powder diffraction (XRD), cyclic voltammetry, and transmission electron microscopy (TEM).We studied the dependence of the doped ZnS quantum dots photoluminescence on the dopant and the dopant concentration. Results show that Co2+ ions are doped mainly on the ZnS nanocrystal's surface and as a result, the band-edge and surface defect emissions of the ZnS quantum dots are substituted by a Co2+-related PL emission. The best photoluminescence intensity was obtained for the 5%(molar fraction) cobalt doped ZnS quantumdots with MPA as the stabilizer. The cobalt doped ZnS quantum dots are 4 nmin diameter and are monodispersive.

Key words: Photoluminescence, ZnS:Co, Quantumdots, Doping, Preparation, Electrochemistry

MSC2000: 

  • O649