Acta Phys. -Chim. Sin. ›› 2010, Vol. 26 ›› Issue (02): 507-510.doi: 10.3866/PKU.WHXB20100203

• PHYSICAL CHEMISTRY OF MATERIALS • Previous Articles     Next Articles

Optical Properties of Single-Crystal GaN Nanowires Synthesized by Pd Catalysis

GUO Yong-Fu, XUE Cheng-Shan, SHI Feng, ZHUANG Hui-Zhao, LIU Wen-Jun, SUN Hai-Bo, CAO Yu-Ping   

  1. Institute of Semiconductors, Shandong Normal University, Jinan 250014, P. R. China
  • Received:2009-08-18 Revised:2009-11-10 Published:2010-01-26
  • Contact: XUE Cheng-Shan E-mail:xuechengshan@sdnu.edu.cn

Abstract:

Based on the catalytic property of palladium, GaN nanowires were fabricated by ammoniating Pd:Ga2O3 thin films at 950 ℃, which were deposited onto a Si(111) substrate by radio frequency (RF) magnetron sputtering. Scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), and high-resolution transmission electron microscopy (HRTEM) were used to characterize the structure, morphology, and composition of the samples. Results reveal that the nanowires are single-crystal GaN with a hexagonal wurtzite structure and they have diameters ranging from 20 to 60 nm with lengths of up to several tens of micrometers. Moreover, most of the GaN nanowires have a smooth surface without any impurities and are of high crystal quality. The optical properties of the samples were measured by photoluminescence spectroscopy and three emission bands with peaks at 361.1, 388.6, and 426.3 nm were observed. Additionally, the bandgap UV light emission has a weak blue shift compared to the bulk GaN. We briefly discuss the growth mechanismof the GaN nanowires.

Key words: Nanowires, GaN, Sputtering, Optical property, Pd catalysis, Single crystal

MSC2000: 

  • O644