Acta Phys. -Chim. Sin. ›› 2011, Vol. 27 ›› Issue (02): 432-436.doi: 10.3866/PKU.WHXB20110231

• ELECTROCHEMISTRY AND NEW ENERGY • Previous Articles     Next Articles

Effect of Se Vapor Concentration on CIGS Film Preparation

LIAO Cheng, HAN Jun-Feng, JIANG Tao, XIE Hua-Mu, JIAO Fei, ZHAO Kui   

  1. State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, P. R. China
  • Received:2010-11-03 Revised:2010-12-05 Published:2011-01-25
  • Contact: LIAO Cheng E-mail:CLiao@pku.edu.cn
  • Supported by:

    The project was supported by the Natural Science Foundation of Beijing, China (H030630010120).

Abstract:

We applied the “selenization of stack element layers” method to the preparation of CuIn1-xGaxSe2 (CIGS) films. The selenium vapor concentration was precisely controlled to optimize the annealing process using a homemade bilayer tubular selenization facility, and its effect on the photoelectric characteristics of the films was studied. Auger electron spectroscopy (AES) and X-ray diffraction (XRD) were used to analyze the composition distribution in the cross-section and to obtain phase information, respectively. The output performance of the CIGS device was also measured under AM1.5 1000 W·m-2 illumination. The results indicated that the molybdenum back contact layer was seriously degraded by the saturated selenium vapor during annealing. Annealing with a low concentration of selenium vapor led to bad performance because of segregation and defects in the film. The CIGS film was homogeneous after annealing in a selenium-free inert atmosphere and a conversion efficiency of 8.5% was obtained.

Key words: Bi-layer tubular selenization facility, Selenization of stack element layer, Saturated selenium vapor, Annealing, Segregation

MSC2000: 

  • O649