Acta Phys. -Chim. Sin. ›› 2011, Vol. 27 ›› Issue (05): 1232-1238.doi: 10.3866/PKU.WHXB20110422

• PHYSICAL CHEMISTRY OF MATERIALS • Previous Articles     Next Articles

Effects of Substrate-Target Distance and Si Co-Doping on the Properties of Al-Doped ZnO Films Deposited by Magnetron Sputtering

XU Hao1,2, LU Fang1, FU Zheng-Wen2   

  1. 1. Shanghai Key Laboratory of Molecular Catalysts and Innovative Materials, Surface Physics Laboratory & Department of Physics, Fudan University, Shanghai 200433, P. R. China;
    2. Department of Chemistry & Laser Chemistry Institute, Fudan University, Shanghai 200433, P. R. China
  • Received:2010-12-20 Revised:2011-03-04 Published:2011-04-28
  • Contact: FU Zheng-Wen
  • Supported by:

    The project was supported by the Science & Technology Commission of Shanghai Municipality (08DZ2270500, 09JC1401300), National Natural Science Foundation of China (20773031), National Key Basic Research Program of China (973) (2007CB209702), and National High-Tech Research and Development Program of China (863) (2007AA03Z322).


Transparent conductive Al-doped ZnO (AZO) and Si-codoped AZO (AZO:Si) films were deposited on square quartz substrates by radio frequency (RF) magnetron sputtering. The effect of distance between the substrate and target (Dst) and the effect of co-doping Si on the electrical and optical properties of the AZO films were systematically investigated. The resistivity, carrier concentration, and mobility were found to be strongly dependent on the Dst values. With a decrease in Dst, the carrier concentration and mobility increased significantly, which resulted in improved conductivity. The lowest resistivity of 4.94×10-4 Ω·cm was obtained at a Dst of 4.5 cm, and this was associated with a carrier concentration of 3.75×1020 cm-3 and a mobility of 33.7 cm2·V-1·s-1. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) spectroscopy, and grain boundary scattering models were used to analyze the relationship between the carrier concentration and the mobility at different deposition (Dst) values. Transmittance spectra showed an average transmittance of >93% in the visible-near infrared range for all the samples and a blue shift of the absorption edge with a decrease in Dst. AZO:Si films had high-conductance and high-transmittance optical properties compared with AZO films, and they had better resistivity stability than the AZO films when exposed to a hot and damp atmosphere, which is practically meaningful.

Key words: AZO, AZO:Si, Substrate-target distance, Radio frequency magnetron sputtering


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