磁控溅射中靶-基底距离与Si共掺对ZnO:Al薄膜性质的影响

doi:10.3866/PKU.WHXB20110422

Acta Phys. -Chim. Sin. ›› 2011, Vol. 27 ›› Issue (05): 1232-1238.doi: 10.3866/PKU.WHXB20110422

• PHYSICAL CHEMISTRY OF MATERIALS • Previous Articles Next Articles

Effects of Substrate-Target Distance and Si Co-Doping on the Properties of Al-Doped ZnO Films Deposited by Magnetron Sputtering

XU Hao^1,2, LU Fang¹, FU Zheng-Wen²

1. Shanghai Key Laboratory of Molecular Catalysts and Innovative Materials, Surface Physics Laboratory & Department of Physics, Fudan University, Shanghai 200433, P. R. China;
2. Department of Chemistry & Laser Chemistry Institute, Fudan University, Shanghai 200433, P. R. China

Received:2010-12-20 Revised:2011-03-04 Published:2011-04-28
Contact: FU Zheng-Wen E-mail:zhengwen@sh163.net
Supported by:
The project was supported by the Science & Technology Commission of Shanghai Municipality (08DZ2270500, 09JC1401300), National Natural Science Foundation of China (20773031), National Key Basic Research Program of China (973) (2007CB209702), and National High-Tech Research and Development Program of China (863) (2007AA03Z322).

Abstract

Abstract:

Transparent conductive Al-doped ZnO (AZO) and Si-codoped AZO (AZO:Si) films were deposited on square quartz substrates by radio frequency (RF) magnetron sputtering. The effect of distance between the substrate and target (D_st) and the effect of co-doping Si on the electrical and optical properties of the AZO films were systematically investigated. The resistivity, carrier concentration, and mobility were found to be strongly dependent on the D_st values. With a decrease in D_st, the carrier concentration and mobility increased significantly, which resulted in improved conductivity. The lowest resistivity of 4.94×10^-4 Ω·cm was obtained at a D_st of 4.5 cm, and this was associated with a carrier concentration of 3.75×10²⁰ cm^-3 and a mobility of 33.7 cm²·V^-1·s^-1. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) spectroscopy, and grain boundary scattering models were used to analyze the relationship between the carrier concentration and the mobility at different deposition (D_st) values. Transmittance spectra showed an average transmittance of >93% in the visible-near infrared range for all the samples and a blue shift of the absorption edge with a decrease in D_st. AZO:Si films had high-conductance and high-transmittance optical properties compared with AZO films, and they had better resistivity stability than the AZO films when exposed to a hot and damp atmosphere, which is practically meaningful.

Key words: AZO, AZO:Si, Substrate-target distance, Radio frequency magnetron sputtering

MSC2000:

O649

XU Hao, LU Fang, FU Zheng-Wen. Effects of Substrate-Target Distance and Si Co-Doping on the Properties of Al-Doped ZnO Films Deposited by Magnetron Sputtering[J].Acta Phys. -Chim. Sin., 2011, 27(05): 1232-1238.

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Effects of Substrate-Target Distance and Si Co-Doping on the Properties of Al-Doped ZnO Films Deposited by Magnetron Sputtering

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