Acta Phys. -Chim. Sin. ›› 2011, Vol. 27 ›› Issue (05): 1249-1253.doi: 10.3866/PKU.WHXB20110430

• PHYSICAL CHEMISTRY OF MATERIALS • Previous Articles     Next Articles

Preparation of Sn2S3 One-Dimensional Nanostructure Arrays by Chemical Vapor Deposition

PENG Yue-Hua, ZHOU Hai-Qing, LIU Xiang-Heng, HE Xiong-Wu, ZHAO Ding, HAI Kuo, ZHOU Wei-Chang, YUAN Hua-Jun, TANG Dong-Sheng   

  1. Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha 410081, P. R. China
  • Received:2010-10-25 Revised:2011-01-10 Published:2011-04-28
  • Contact: TANG Dong-Sheng E-mail:dstang@hunnu.edu.cn
  • Supported by:

    The project was supported by the Program for New Century Excellent Talents in Ministry of Education, China (NCET-07-0278), Excellent Youth Foundation of Hunan Scientific Committee, China (08JJ1001), Natural Science Foundation of Hunan Province, China (07JJ6009) and Program for Excellent Talents in Hunan Normal University, China (070623).

Abstract:

We prepared large-area, vertically aligned Sn2S3 one-dimensional nanostructure arrays using tin and sulfur powder as reactants on a lead-plated silicon substrate by chemical vapor deposition (CVD). Scanning electron microscopy (SEM) showed that these Sn2S3 nanowires had diameters around 100 nm and lengths of several microns. X-ray diffraction (XRD) results indicated that the obtained Sn2S3 nanowires were composed of an orthorhombic phase with very good crystallinity, and grow in the [002] direction. Ultraviolet-visible (UV-Vis) diffuse reflectance spectroscopy revealed that they are direct-bandgap semiconductors with a bandgap of 2.0 eV. The growth of Sn2S3 nanowires is governed by the vapor-solid (V-S) growth mechanism, and the Pb atoms present in the lattice as substitutional atoms instead of on the tips of nanowires as catalyst particles.

Key words: One-dimensional nanostructure, Array, Chemical vapor deposition, Sn2S3, Vapor-solid growth mechanism

MSC2000: 

  • O643