Acta Phys. -Chim. Sin. ›› 2011, Vol. 27 ›› Issue (05): 1249-1253.doi: 10.3866/PKU.WHXB20110430

• PHYSICAL CHEMISTRY OF MATERIALS • Previous Articles     Next Articles

Preparation of Sn2S3 One-Dimensional Nanostructure Arrays by Chemical Vapor Deposition

PENG Yue-Hua, ZHOU Hai-Qing, LIU Xiang-Heng, HE Xiong-Wu, ZHAO Ding, HAI Kuo, ZHOU Wei-Chang, YUAN Hua-Jun, TANG Dong-Sheng   

  1. Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha 410081, P. R. China
  • Received:2010-10-25 Revised:2011-01-10 Published:2011-04-28
  • Contact: TANG Dong-Sheng
  • Supported by:

    The project was supported by the Program for New Century Excellent Talents in Ministry of Education, China (NCET-07-0278), Excellent Youth Foundation of Hunan Scientific Committee, China (08JJ1001), Natural Science Foundation of Hunan Province, China (07JJ6009) and Program for Excellent Talents in Hunan Normal University, China (070623).


We prepared large-area, vertically aligned Sn2S3 one-dimensional nanostructure arrays using tin and sulfur powder as reactants on a lead-plated silicon substrate by chemical vapor deposition (CVD). Scanning electron microscopy (SEM) showed that these Sn2S3 nanowires had diameters around 100 nm and lengths of several microns. X-ray diffraction (XRD) results indicated that the obtained Sn2S3 nanowires were composed of an orthorhombic phase with very good crystallinity, and grow in the [002] direction. Ultraviolet-visible (UV-Vis) diffuse reflectance spectroscopy revealed that they are direct-bandgap semiconductors with a bandgap of 2.0 eV. The growth of Sn2S3 nanowires is governed by the vapor-solid (V-S) growth mechanism, and the Pb atoms present in the lattice as substitutional atoms instead of on the tips of nanowires as catalyst particles.

Key words: One-dimensional nanostructure, Array, Chemical vapor deposition, Sn2S3, Vapor-solid growth mechanism


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