Acta Phys. -Chim. Sin. ›› 2011, Vol. 27 ›› Issue (09): 2160-2166.doi: 10.3866/PKU.WHXB20110913

• ELECTROCHEMISTRY AND NEW ENERGY • Previous Articles     Next Articles

Preparation and Photoelectrochemical Performance of BiVO4 Film Electrode

PENG Tian-You, KE Ding-Ning, ZENG Peng, ZHANG Xiao-Hu, FAN Ke   

  1. College of Chemistry and Molecular Science, Wuhan University, Wuhan 430072, P. R. China
  • Received:2011-04-06 Revised:2011-06-05 Published:2011-08-26
  • Contact: PENG Tian-You E-mail:typeng@whu.edu.cn
  • Supported by:

    The project was supported by the National Natural Science Foundation of China (20871096, 20973128), Program for New Century Excellent Talents in University, China (NCET-07-0637), and Fundamental Research Funds for the Central Universities of China (2081003).

Abstract: A BiVO4 film electrode was prepared using a home-made BiVO4 nanopowder and the effects of annealing temperature and film thickness on its photoelectrochemical behavior, electron transport and recombination in the BiVO4 electrode were systematically studied by electrochemical techniques. Experimental results indicate that the annealing temperature and film thickness can significantly influence the photoelectrochemical characteristics of the BiVO4 electrode. At low annealing temperature (≤500 °C) the photoelectrochemical activity improved upon increasing the temperature and the optimal activity was obtained for the electrode annealed at 500 ° C. At high temperature (>500 ° C) the photoelectrochemical activity decreased because of a marked increase of bulk traps in the electrode. The BiVO4 electrode showed good photon-to-electron conversion efficiency under visible light and its bandgap was found to be 2.36 eV based on an incident monochromatic photon-to-electric conversion efficiency curve. The flat-band potential (Efb) of BiVO4 was determined to be -0.7 V (vs Ag/AgCl) by the Mött Schottky method. These results give an important reference for the optimization of the BiVO4 photocatalytic system.

Key words: BiVO4 film electrode, Photoelectrochemical performance, Transient photocurrent spectrum, Flat-band potential

MSC2000: 

  • O646