Acta Phys. -Chim. Sin. ›› 2012, Vol. 28 ›› Issue (03): 591-595.doi: 10.3866/PKU.WHXB201112161

• ELECTROCHEMISTRY AND NEW ENERGY • Previous Articles     Next Articles

Photovoltaic Performance of Dye-Sensitized Solar Cells Based on Al-Doped TiO2 Thin Films

LIU Qiu-Ping1,2,3, HUANG Hui-Juan4, ZHOU Yang1, DUAN Yan-Dong3, SUN Qing-Wen3, LIN Yuan3   

  1. 1. School of Mechanical, Electronic and Control Engineering, Beijing Jiaotong University, Beijing 100044, P. R. China;
    2. College of Software, Jiangxi University of Science and Technology, Nanchang 330013, P. R. China;
    3. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China;
    4. Jiujiang Vocational & Technical College, Jiujing 332000, Jiangxi Province, P. R. China
  • Received:2011-10-26 Revised:2011-12-13 Published:2012-02-23
  • Contact: ZHOU Yang, LIN Yuan;
  • Supported by:

    The project was supported by the National Key Basic Research Program of China (973) (2006CB202605), National High-Tech Research and Development Program of China (863) (2007AA05Z439), and National Natural Science Foundation of China (20973183).

Abstract: Al-doped TiO2 thin films were synthesized by the hydrothermal method. To prepare a working electrode, a TiO2 or AlTiO2 slurry was coated onto a fluorine-doped tin oxide glass substrate by the doctor blade method and the coated substrate was sintered at 450 ° C. TiO2 and Al-doped TiO2 films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM), and tested by the dye-sensitized solar cell (DSSCs) system. The influences of Al-doping on TiO2 crystal form and the photovoltaic performance of DSSCs were investigated. X-ray photoelectron spectroscopy (XPS) data indicate that the doped Al ions exist in the form of Al3+ , and these ions play a role as e- or h+ traps and reduce the e-/h+ pair recombination rate. The corresponding Mott- Schottky plot indicates that the Al-doped TiO2 photoanode shifts the flat band potential positively. The positive shift of the flat band potential improves the driving force of injected electrons from the LUMO of the dye to the conduction band of TiO2. The Al-doped TiO2 thin film shows a photovoltaic efficiency of 6.48%, which is higher than that of the undoped TiO2 thin film (5.58%) and the short-circuit photocurrent density increases from 16.5 to 18.2 mA·cm-2.

Key words: Titanium dioxide, Al-doped film, Hydrothermal method, X-ray photoelectron spectroscopy, Photovoltaic performance, Flat band potential


  • O646