Acta Phys. -Chim. Sin. ›› 2012, Vol. 28 ›› Issue (08): 1913-1922.doi: 10.3866/PKU.WHXB201205153

• ELECTROCHEMISTRY AND NEW ENERGY • Previous Articles     Next Articles

Electrodepositied Gallium on Gallium and Copper/Indium Substratess

ZHANG Chao, AO Jian-Ping, WANG Li, JIANG Tao, SUN Guo-Zhong, HE Qing, ZHOU Zhi-Qiang, SUN Yun   

  1. Key Laboratory of Optoelectronic Information Technology, Ministry of Education, Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology, Institute of Photo-Electronic Thin FilmDevices and Technique, Nankai University, Tianjin 300071, P. R. China
  • Received:2012-03-29 Revised:2012-05-14 Published:2012-07-10
  • Contact: AO Jian-Ping E-mail:aojp@nankai.edu.cn
  • Supported by:

    The project was supported by Ph. D Programs Foundation of Ministry of Education of China (20090031110031).

Abstract:

We investigate the electrodeposition of gallium metallic precursor on gallium and Cu/In substrates from acidic aqueous solutions. The effect of the supporting electrolyte and the solution pH value for the electrodeposition of Ga is investigated by cyclic voltammetry. During Ga electrodeposition, gallium gradually diffuses into the film, and reacts with CuIn alloy to produce CuGae2 at the Cu/In interface. We use triethanolamine to protect the Cu/In and Ga films from being oxidized, and thus this improves the current efficiency of Ga-electrodeposition. The Cu-In-Ga films are annealed in an Se atmosphere to produce In1-xGaxSee2(CIGS) thin films with high quality, and the efficiency of the solar cell prepared using these films is 9.42%.

Key words: Electrodeposition, Cu(In1-xGax)Se2, Cyclic voltammetry, Metallic precursor, Solar cell

MSC2000: 

  • O646