Acta Phys. -Chim. Sin. ›› 2013, Vol. 29 ›› Issue (01): 73-81.doi: 10.3866/PKU.WHXB201210233

• ELECTROCHEMISTRY AND NEW ENERGY • Previous Articles     Next Articles

N3/Al2O3/N749 Alternating Assembly Structure Broadening the Photoresponse and Interface Modification Effects in Quasi-Solid Dye-Sensitized Solar Cells

GAO Rui, NIU Guang-Da, WANG Li-Duo, MA Bei-Bei, QIU Yong   

  1. Key Laboratory of Organic Optoelectronics & Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, P. R. China
  • Received:2012-08-14 Revised:2012-10-19 Published:2012-12-14
  • Supported by:

    The project was supported by the National Natural Science Foundation of China (50873055) and National Key Basic Research Program of China (973) (2009CB930602).


In this paper, the interface modification effects and electron processes in N3/Al2O3/N749 alternating structured dye-sensitized solar cells (DSCs) were studied. UV-Vis absorption and monochromatic incident photon-to-electron conversion efficiency (IPCE) spectra showed that the N3/Al2O3/ N749 structure broadened the photo-response range. Photocurrent-voltage (I-V) curves showed that enhanced conversion efficiencies were obtained. Compared with N3- and N749-only structures, the efficiency of the N3/Al2O3/N749 structure increased from 4.22% and 3.09% to 5.75% (36% and 86% enhancement), respectively. From electrochemical impedance spectroscopy (EIS) results, the N3/Al2O3/ N749 structure displayed increased interface resistance under dark conditions. This indicates that charge recombination is reduced in the N3/Al2O3/N749 device, which was confirmed from the dark current measurements. Furthermore, to analyze the electron processes, a series of equivalent circuit models were built to mimic the injection and recombination process in DSCs. Intensity modulated photocurrent spectroscopy (IMPS) and intensity modulated photovoltage spectroscopy (IMVS) also showed that this structure improved the electron life time and diffusion.

Key words: Alternating assembly structure, Photoresponse range, Charge recombination, Electron process


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