Acta Phys. -Chim. Sin. ›› 2014, Vol. 30 ›› Issue (1): 135-140.doi: 10.3866/PKU.WHXB201311052

• CATALYSIS AND SURFACE SCIENCE • Previous Articles     Next Articles

Synthesis and Characterization of Boron-Doped SiC for Visible Light Driven Hydrogen Production

DONG Li-Li1,2, WANG Ying-Yong1, TONG Xi-Li1, JIN Guo-Qiang1, GUO Xiang-Yun1   

  1. 1 State Key Laboratory of Coal Conversion, Institute of Coal Chemistry, Chinese Academy of Sciences, Taiyuan 030001, P. R. China;
    2 University of Chinese Academy of Sciences, Beijing 100049, P. R. China
  • Received:2013-08-22 Revised:2013-11-04 Published:2014-01-01
  • Contact: WANG Ying-Yong E-mail:wangyy79@sxicc.ac.cn
  • Supported by:

    The project was supported by the National Natural Science Foundation of China (21173251, 21203233), Innovation Fund of Institute of Coal Chemistry, Chinese Academy of Sciences (Y1SC6R1991), and State Key Laboratory of Coal Conversion, China (2013BWZ006).

Abstract:

Boron-doped β-SiC (BxSiC) photocatalysts were prepared by in-situ carbothermal reduction, and their photocatalytic performances for H2 evolution under visible light irradiation were investigated. The crystal structure, surface property, morphology, and band gap structure of the BxSiC photocatalysts were studied using X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, and ultraviolet-visible absorption spectroscopy. The characterization results indicate that B atoms have doped into the SiC lattice and substituted Si sites, leading to the formation of a shallow acceptor level above the valence band of SiC, resulting in a narrowed band gap energy. The shallow acceptor level acts as a hole trap, preventing the recombination of photo-excited electrons and holes. Therefore, the photocatalytic H2 evolution activity of B-doped SiC was greatly improved compared with that of SiC. The highest hydrogen evolution rate was obtained when the B/Si molar ratio was 0.05.

Key words: β-SiC, B doping, Photocatalysis, Hydrogen evolution, Visible light

MSC2000: 

  • O643