Acta Phys. -Chim. Sin. ›› 2016, Vol. 32 ›› Issue (6): 1307-1313.doi: 10.3866/PKU.WHXB201604083

• COMMUNICATION • Previous Articles     Next Articles

Lead Iodide as a New Type of Hole Transport Layer for the High Performance of P3HT:PC61BM-Based Solar Cells

Guo-Cheng XU1,Xian-Yun DENG1,Jun-Li LI2,Rui ZHANG3,Yun-Peng XIE1,Guo-Li TU2,Jiang-Bin XIA3,*(),Xing LU1,*()   

  1. 1 State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
    2 Wuhan National Laboratory for Optoelectronics, Wuhan 430074, P. R. China
    3 College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China)
  • Received:2016-02-19 Published:2016-06-03
  • Contact: Jiang-Bin XIA,Xing LU E-mail:jbxia@whu.edu.cn;lux@hust.edu.cn
  • Supported by:
    the National Natural Science Foundation of China(51472095)

Abstract:

We develop a novel hole extracting buffer layer material, namely PbI2. The structure of the device we fabricate is ITO/PbI2/P3HT:PC61BM/Al (indium tin oxide/lead iodide/poly(3-hexylthiophene):[6,6]-phenyl C61-butyric acid methyl ester/aluminum cathode). The preparation method involves spin-coating and thermal evaporation. We study the effectiveness of using PbI2 in the prototype ITO/P3HT:PC61BM/Al polymer solar cell devices. The concentration, annealing temperature, and annealing time all have an influence on the quality of the PbI2 films. Obviously, higher-quality PbI2 films will lead to better power conversion efficiency. The transmittance, crystallization, and morphology properties of the PbI2 films can be used to describe the quality of the films. We characterize the PbI2 film affording the best performance by UV-Vis spectrophotometry, X-ray powder diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM). Our results reveal that the performance of the solar cell device is sensitive to the concentration of PbI2, and the best conditions are a concentration of 3 mg·mL-1, annealing temperature of 100 ℃, and annealing time of 30 min. The open circuit voltage (Voc) is 0.45 V, the short circuit current density (Jsc) is 7.9 mA·cm-2, and the fill factor (FF) is 0.46. Compared with the devices without any buffer layer (0.85%), the power conversion efficiency (PCE) using PbI2 as the buffer layer can reach 1.64%.

Key words: Polymer solar cell, Anode buffer layer, Lead iodide, Concentration, Power conversion efficiency

MSC2000: 

  • O646