Acta Phys. -Chim. Sin. ›› 2017, Vol. 33 ›› Issue (2): 295-304.doi: 10.3866/PKU.WHXB201610172

• REVIEW • Previous Articles     Next Articles

Development of Solid Solution Photocatalytic Materials

Tao JING,Ying DAI*()   

  • Received:2016-08-09 Published:2017-01-12
  • Contact: Ying DAI E-mail:daiy60@sina.com
  • Supported by:
    The project was supported by the National Key Basic Research Program of China (973)(2013CB632401);National Natural Science Foundation of China(21333006,11374190);Taishan Scholar Program of Shandong Province, China

Abstract:

Traditional semiconductor photocatalysts with a wide band gap can achieve visible light responses through element doping. However, the localized levels introduced by impurities may act as recombination centers of charge carriers, which may lower the photocatalytic activity of the doped materials. The solid solution method can realize precise regulation of the band gap and band edge positions of materials to obtain an optimal balance between their optical absorption and redox potentials. The solid solution method is therefore an effective approach to improve the photocatalytic performance of semiconductor materials. In the present review, considering our recent research, we briefly discuss the latest progress of the solid solution method to tune the band gap and band edge positions of photocatalytic materials as well as examining its influence on carrier separation and migration properties. Finally, challenges and prospects for further development of this method are presented.

Key words: Photocatalytic material, Doping, Solid solution, Electronic structure, Carrier separation

MSC2000: 

  • O644