Acta Phys. -Chim. Sin. ›› 2017, Vol. 33 ›› Issue (10): 2092-2098.doi: 10.3866/PKU.WHXB201705114

• ARTICLE • Previous Articles     Next Articles

Preparation of Indium-Zinc-Oxide Thin Film Transistors by Hot-Pressing Sintering Target

Er-Long SONG,Lin-Feng LAN*(),Zhen-Guo LIN,Sheng SUN,Wei SONG,Yu-Zhi LI,Pei-Xiong GAO,Peng ZHANG,Jun-Biao PENG   

  • Received:2017-03-13 Published:2017-07-17
  • Contact: Lin-Feng LAN E-mail:lanlinfeng@scut.edu.cn
  • Supported by:
    the National Key Research Program of China(2016YFB0401105);National Natural Science Foundation of China(61204087);Pearl River S & T Nova Program of Guangzhou, China(2014J2200053);Guangdong Province Science and Technology Plan, China(2015B090914003)

Abstract:

The sintering condition was studied how to influence the performance of indium-zinc-oxide (IZO) target and thin film transistor (TFT) in this paper. IZO targets was prepared by hot-pressing sintering using mixed power (20% (w, mass fraction) In2O3), then fabricated TFT with above sintering targets. X-ray diffraction (XRD) patterns & scanning electron microscopy (SEM) images showed targets had good crystallinity and elements were uniformly distributed. The target was typical densification process with sintering temperature of 850 ℃. The volatilization of In2O3 undermined the densification of the target, with condition of 900 ℃-60 min. It can be seen that increase of sintering temperature and elongation of preserving time could inhibit the In2O3 volatilization, facilitated the sintering densification of IZO target and formed the InZnOx crystal phase, thereby increased the density of the target. IZO TFTs′ performance showed the sputtering deteriorates the film quality with low-density target, and the grain of the high-density target was slightly abnormal, which resulted in deterioration of the film uniformity, all reduced the performance of TFT. Therefore, an appropriate high-density target was essential for the preparation of IZO-TFT."

Key words: Thin film transistors, IZO, Hot-pressing sintering, Target, Magnetron sputtering

MSC2000: 

  • O649