单层MoS2(1-x)Se2x合金材料中硒原子的晶界择优掺杂和富集

doi:10.3866/PKU.WHXB201705123

Abstract

Abstract:

We report a microscopic study on the process for the substitution of selenium into monolayer molybdenum disulfide via a joint CVD-STEM characterization. Results from quantitative and statistic STEM reveal that the concentration of Se atoms in grain boundaries is much higher than that in intra-domains of monolayer MoS_2(1-x)Se_2x alloy. In-depth analysis finds that Se atoms are enriched in the distorted regions due to presence of dislocation cores on the grain boundary, which can be further understood by considering the difference of chemical reactivity for doping reaction in different types of grain boundaries with different symmetry and different misorientation angles. Our results pave the way towards the controlled growth of alloyed two-dimensional transition metal dichalcogenide materials with a high precision, and their further applications.

Key words: MoS_2(1-x)Se_2x alloy, Grain boundary enrichment, Atomic-resolution scanning transmission electron microscopy

MSC2000:

O641

Dan-Hui LÜ,Dan-Cheng ZHU,Chuan-Hong JIN. Preferential Substitution of Selenium along the Grain Boundaries in Monolayer MoS_2(1-x)Se_2x Alloy[J].Acta Phys. -Chim. Sin., 2017, 33(8): 1514-1519.

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Preferential Substitution of Selenium along the Grain Boundaries in Monolayer MoS_2(1-x)Se_2x Alloy

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Preferential Substitution of Selenium along the Grain Boundaries in Monolayer MoS2(1-x)Se2x Alloy

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Preferential Substitution of Selenium along the Grain Boundaries in Monolayer MoS_2(1-x)Se_2x Alloy