Acta Phys. -Chim. Sin. ›› 1986, Vol. 2 ›› Issue (01): 6-12.doi: 10.3866/PKU.WHXB19860102

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STUDIES ON METAL-SEMICONDUCTOR INTERACTION: THE EFFECT OF THE INTERFACIAL STRUCTURE ON THE ELECTROCHEMICAL BEHAVIOR OF Pt—TiO2 AND Pt-ZnO

Yu Chunying; Chen Yixuan; Sheng Shishan; Li Wenzhao   

  1. Dalian Institute of Chemical Physics, Academia Sinica
  • Received:1985-04-08 Revised:1985-07-12 Published:1986-02-15

Abstract: Electric property across the Pt film-TiO_2 and Pt film-ZnO interface was characterized by the Ⅰ-Ⅴ curves. It was seen clearly that by H_2 treatment at high temperature the original rectifying property of the metal-semiconductor junction was changed into ohmic resistance contact.
Electron exchange capability at the Pt film-TiO_2 and Pt-ZnO surface was measured electrochemically by making contact with a solution of Fe(CN)_6~(4-)/Fe(CN)_6~(3-). It was illustrated that the H_2 treated SMSI sample was much more feasible to charge transfer than the non-SMSI ones and it worked well either anodically or cathodically, analogous to the metallic Pt.
By Auger depth profiling it was demonstrated that by heating Pt film-TiO_2 in H_2 interdiffusion at the metal-semiconductor interface happened, as a consequence the interfacial energy barrier for electron transfer was diminished and the charge transfer process greatly enhanced.