Acta Phys. -Chim. Sin. ›› 1990, Vol. 6 ›› Issue (04): 480-484.doi: 10.3866/PKU.WHXB19900417
• ARTICLE •
Liu Dong; Zhang Ying-Zhou; Zhou Shao-Min
The cathodic deposition mechanism of CdSe films on Ti substrates was investigated using cyclic voltammetry and in-situ photocurrent mesurements. XPS analysis showed that CdSe film composition depends on deposition potentials, deposition time and concentration of H_2SeO_3 in the bath. It was found that in 0.1 mol·L~(-1) CdSO_4+4 mmol·L~(-1) H_2SeO_3+0.2 mol·L~(-1) H_2SO_4, the deposits formed at potentials more positive than -0.50 V are rich in Se, alternatively films rich in Cd are obtained at potentials more negative than -0.70 V. The Se/Cd ratio of CdSe layers deposited at -0.69 V approach to 1.1, but the content of Se in the deposits increases with increasing H_2SeO_3 concentration. The results showed that the electrodeposition of CdSe follows two different mechanisms corresponding to different deposition conditions. Modification of stoichiometry in CdSe films was also discussed.
Liu Dong; Zhang Ying-Zhou; Zhou Shao-Min. The Composition and Formation Mechanism of Electrodeposited CdSe Films[J].Acta Phys. -Chim. Sin., 1990, 6(04): 480-484.
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