Acta Phys. -Chim. Sin. ›› 1992, Vol. 8 ›› Issue (03): 326-331.doi: 10.3866/PKU.WHXB19920309

• ARTICLE • Previous Articles     Next Articles

The Implantation of Light-Induced CoIONS into Ti Anodic Oxide Film

Chen Kun-Yao; Lin Zhong-Hua   

  1. Department of Chemistry, Xiamen University, Xiamen 361005
  • Received:1991-01-10 Revised:1991-06-19 Published:1992-06-15
  • Contact: Lin Zhong-Hua

Abstract: Implantation of light-induced Co ions from Co(NO_3)_2 solution (≥0. 10 mol·cm~(-3)) into Ti anodic oxide film was observed and studied by photocurrent spectroscopy and XPS technique. The results show that implantation could not take place at film/solution interface without illumination. But the Co ions at film/solution interface excited by illuminating can overcome the interface barrier and the TiO_2 lattice energy and go into the tetrahedral interstitial sites and/or octahedral interstitial sites in TiO_2 lattice. The implanted Co ions can interact with the O~(2-) ions in the lattice and probably form tetracoordinated compound of Co with typical blue color and hexacoordinated compound of Co with typical pink color. The quantum efficiency for photoelectric conversion of Ti anodic film decreases with very high doping concentration of Co ions.

Key words: Implantation of Co ions, Light-induced, Ti anodic oxide film