Acta Phys. -Chim. Sin. ›› 1994, Vol. 10 ›› Issue (01): 61-63.doi: 10.3866/PKU.WHXB19940114

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A Study of Breakdown Process Between n-InP/Solution Interface at Irradiation

Qian Dao-Sun, Zhu Zhen-Hua, Zhao Jun   

  1. Department of Applied Chemistry, Shanghai Jiao Tong University, Shanghai 200030
  • Received:1992-05-25 Revised:1992-10-05 Published:1994-01-15
  • Contact: Qian Dao-Sun


In this work, the tunneling breakdown of n-InP electrode using large signal current density step has been investigated. The influence of current density on the tunneling breakdown is not obvious, but the light intensities affect the breakdown severely. Some parameters are calculated during breakown and explained.

Key words: Indium phosphide, Semiconducting electrode, Photoelectrochemistry, Large signal current step method