Acta Phys. -Chim. Sin. ›› 1994, Vol. 10 ›› Issue (04): 348-353.doi: 10.3866/PKU.WHXB19940412

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Effect of VA Elements on the Semiconducting Properties of the Anodic Plumbous Oxide Flim(II)

Pu Zong, Zhou Wei-Fang   

  1. Department of Chemistry, Fudan University, Shangahi 200433
  • Received:1992-09-04 Revised:1993-03-05 Published:1994-04-15
  • Contact: Zhou Wei-Fang


The semiconducting properties of t-PbO (also known as tet-PbO or α-PbO) in the anodic plumbous oxide films formed on lead, lead-arseinc, lead-animony and lead bismuth alloys in 4.5 mol·L~(-1) H_2SO_4(22 ℃) at 0.9 V (vs. Hg/Hg_2SO_4) for 7 h have been studied using measu-rements of photo-electrochemical current. These elements have little effect on the values of the band-gap energy of t-PbO and o-PbO in the film. From the relation between quantum yield and electrode potential, the values of the donor density of the t-PbO in the films formed on Pb, Pb-lat%As, Pb-lat%Sb and Pb-lat%Bi are 9.3×10~(15),1.0×10~(16),3.1×10~(16) and 1.3×10~(17) cm~(-3), respectively. Meanwhile, the corresponding flat-band potentials range from -0.08 to -0.28 V(vs. Hg/Hg_2SO_4). By comparing the effect of these VA elements on the growth rate of the t-PbO with that on the donor density, it is concluded that these experimental results condorm to the Hauffe Rules.

Key words: Anodic plumbous oxide film, Semiconductor, Photoelectrochemical current method, Hauffe rules