Abstract:

Hydrogenated nano-crystalline silicon (nc-Si:H) films have been prepared by plasma enhanced chemical vapor deposition (PECVD) method under rigorously controlled conditions of deposition. The nc-Si:H films consist of a mass of nanometer scale grains and an interfacial region, i.e. the crystalline phase and the grain boundary phase. It is especially valuable for use in some devices, for example, quantum function devices and film sensors etc.

Key words: Semiconductor materials, N ano-crystalline semiconductor, Quantum function devices