Abstract: Tb-doped SiO2-B2O3-NaF glass was prepared by sol-gel process,using tetraethoxy silcane, boric acid and sodium fluoride as precursors,0.10 mol•L－1 TbCl3 solution as the dopant. The luminescent properties of Tb3＋ doped SiO2-B2O3-NaF phosphors were investigated. The phosphors showed prominent luminescence in green, due to the electronic transition of 5D4—7F5 (Tb3＋).For all Tb3＋ concentrations used the emission spectrum was essentially the same with the exception of intensity and weak peak belonging to transition from 5D3 was detected in lower Tb3＋ doped samples and lower annealing temperature samples. The intensity of emission from 5D3 quenches with increasing of the Tb3＋ concentration and annealing temperature. The observation showed that cross-relaxation obviously took place in the transition 5D3－5D47F6—7F0 and/or 5D3—7F07F6—5D4.The excitation spectra of Tb3＋ emission in SiO2-B2O3-NaF glass consist of broad bands with a maximum at about 230 nm, corresponding to 4f 8—4f 75d 1 transition of Tb3＋ ion, and a series of sharp lines in the range of 300 to 380 nm which belong to transitions between the energy levels of the 4f 8 configuration. The structural characterization of these luminescent materials were carried by using XRD and TEM. The results showed that the phosphor was in amorphous phase.

Key words: Tb^3＋, Luminescent property, SiO₂-B₂O₃-NaF glass