Acta Phys. -Chim. Sin. ›› 2008, Vol. 24 ›› Issue (09): 1689-1693.doi: 10.3866/PKU.WHXB20080928

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Al-Induced Crystallization of Polycrystalline Silicon Thin Films Based on Solution Method

WANG Shuo; LUO Chong; ZHAO Ying; XIONG Shao-Zhen   

  1. The Tianjin Key Laboratory of Photo-Eelectronic Thin Film Devices and Technology, Institute of Photo-Electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, P. R. China
  • Received:2008-03-19 Revised:2008-04-22 Published:2008-09-10
  • Contact: XIONG Shao-Zhen

Abstract: A new low-cost method to prepare polycrystalline silicon thin films by solution-based aluminum-induced crystallization (AIC) was introduced in this article. Amorphous silicon (a-Si) thin films with 50 nm thickness were deposited by low-pressure chemical vapor deposition (LPCVD) and used as the precursors of crystallization. Aluminate solution with several components was spun on the surface of the a-Si films. Crystallization was accomplished at the annealing temperature between 550 and 620 ℃ for several hours in furnace and N2 ambience. The crystallization effect was dependent on the aluminumconcentration in aluminate solution and the surface status of the studied a-Si films. We found that the AIC process could take place only with solution containing meta-aluminates, and continuous polycrystalline silicon thin films could be obtained if the solution concentration was not too low. The natural oxide layers on the surface of a-Si films were good for adhesion of aluminate solution to the films and the formation of larger grains, but would lead to a higher crystallization temperature. In addition, various micrographic patterns taken fromthe crystallized films were observed, which were resulted from different kinds of Al-salt solution as the source for AIC. In one word, it was important to choose appropriate experiment parameters.

Key words: Aluminum-induced crystallization, Chemical inducing source, Solution-based method, Polycrystalline silicon thin film


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