Acta Phys. -Chim. Sin. ›› 2014, Vol. 30 ›› Issue (7): 1377-1383.doi: 10.3866/PKU.WHXB201405093

• PHYSICAL CHEMISTRY OF MATERIALS • Previous Articles     Next Articles

Photoelectric Characteristics of Self-Assembled Semiconducting Carbon Nanotube Thin Films

ZHAO Qing-Liang1, LIU Yang1,2, WEI Nan1, WANG Sheng1   

  1. 1. Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, P. R. China;
    2. Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
  • Received:2014-02-26 Revised:2014-05-06 Published:2014-06-30
  • Contact: WANG Sheng
  • Supported by:

    The project was supported by the National Key Basic Research Program of China (973) (2011CB933002, 2011CB933001) and National Natural Science Foundation of China (61370009, 61271051, 61321001).


We used the self-assembly method to formhigh purity (99%) semiconducting carbon nanotube (CNT) aligned arrays. Thin-film transistors (TFTs) were fabricated with asymmetric Pd and Sc electrodes. We studied the electronic transport characteristics and infrared photoelectronic properties of the TFTs with different channel lengths. The physical mechanism of carrier transport and the dissociation of photoexcited carries are also discussed. We found that the electronic and photoelectronic properties of the TFTs were dependent on the channel length and the average length of the CNTs. The on/off ratio of the device was the lowest when the channel length of the device (L) was less than the average length of the CNTs (LCNT), and it increased with increasing L when L was larger than LCNT. In addition, the short circuit current of the device also decreased. These results provide an effective reference for further infrared detector applications based on high-purity semiconducting carbon nanotube TFTs.

Key words: Carbon nanotube, Self-assembly, Asymmetric contact, Photoelectric response, Infrared, Channel length, Thin filmtransistor


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