Acta Phys. -Chim. Sin. ›› 2017, Vol. 33 ›› Issue (6): 1261-1266.doi: 10.3866/PKU.WHXB201702281

• ARTICLE • Previous Articles    

Perovskite Ferroelectric Nanoplates Induced a Highly Oriented Growth of P (VDF-TrFE) Films

Jin LIU1,Jiang-Quan MAI2,Shi LI1,Zhao-Hui REN1,*(),Ming LI1,Meng-Jiao WU1,Yong-Jun WU1,Xin-Hui LU2,*(),Xiang LI1,He TIAN3,Zong-Rong WANG1,Gao-Rong HAN1,*()   

  1. 1 State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou 310027, P. R. China
    2 Department of Physics, Chinese University of Hong Kong, New Territories, Hong Kong 999077, P. R. China
    3 Center of Electron Microscope, State Key Laboratory of Silicon Material, School of Material Science & Engineering, Zhejiang University, Hangzhou 310027, P. R. China
  • Received:2017-02-15 Published:2017-05-19
  • Contact: Zhao-Hui REN,Xin-Hui LU,Gao-Rong HAN E-mail:renzh@zju.edu.cn;xhlu@phy.cuhk.edu.hk;hgr@zju.edu.cn
  • Supported by:
    the National Natural Science Foundation of China(51232006);the National Natural Science Foundation of China(51472218);the National Key Basic Research Special Foundation, China (973)(2015CB654901);Fundamental Research Funds for the Central Universities, China(2016FZA4005);RGC of Hong Kong GRF(14303314);CUHK Direct Grant, China(4053128)

Abstract:

Ferroelectric polymers are particularly attractive for applications in flexible electronic devices, and controlling its crystalline phase growth is crucial for obtaining optimized ferroelectric properties. Herein we report that a very low introduction (0.2% (w)) of single-domain ferroelectric PbTiO3 nanoplates can effectively mediate the nucleation and subsequent growth of a crystalline phase within P (VDF-TrFE) (denoted by PVTF), forming highly oriented films and significantly improving the ferroelectric properties due to an alignment of the polarization directions of the polymer and the nanoplates.

Key words: P (VDF-TrFE), PbTiO3, Nanoplate, Orientation growth, Ferroelectricity

MSC2000: 

  • O641