Acta Phys. -Chim. Sin. ›› 2008, Vol. 24 ›› Issue (11): 2122-2127.doi: 10.3866/PKU.WHXB20081131

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Frequency Response of SWCNT Field-Effect Transistors with MWCNT Interconnects

ZHU Yu-Zhen; WANG Sheng; WEI Xian-Long; DING Li; ZHANG Zhi-Yong; LIANG Xue-Lei; CHEN Qing; PENG Lian-Mao   

  1. Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, P. R. China
  • Received:2008-05-19 Revised:2008-07-16 Published:2008-11-10
  • Contact: LIANG Xue-Lei E-mail:liangxl@pku.edu.cn

Abstract: Single-walled carbon nanotube field-effect transistors (SWCNT FETs) with multi-walled carbon nanotubes (MWCNTs) as interconnects were fabricated, and their field effect properties were measured and compared with those of the case with metal leads as interconnects. Both cases showed almost the same direct current (DC) response, while the MWCNTs interconnected case showed a little better alternating current (AC) properties. AC measurement showed that the MWCNTs interconnected SWCNT FETs worked well at frequency up to 20 MHz.

Key words: Multi-walled carbon nanotube, Interconnect, Single-walled carbon nanotube, Field-effect transistor

MSC2000: 

  • O649