Abstract: Using combinational chip method, all-components Zn-Al film samples were prepared via ion beam sputtering. The as-deposited multilayer films were transformed into alloy films after annealing in Ar/H2 atmosphere for 2 h at 370 ℃. The compositom, structure, and morphology of the alloy films were characterized using Auger electron spectrum (AES), X-ray diffraction (XRD), and scanning electron microscopy (SEM). The results indicated that homogeneous alloy films with good crystallinity and dense surface were attained after low temperature annealing. The polarization resistance tests in 0.1 mol·L-1 NaCl for characterization of anti-corrosion properties indicated that the Zn-Al alloy thin films with Al mole fraction of about 87% possessed the highest polarization resistance. Further experiments showed that the polarization resistances of Zn-Al alloy thin films with Al mole fraction from 83% to 86% were all higher than 105 Ω·cm-2, which was one order higher than that of hot dip galvanizing coating.

Key words: Combinatorial material chip method, Zinc-aluminumalloy thin film, Anti-corrosion property, Ion beam sputtering