Acta Phys. -Chim. Sin. ›› 1992, Vol. 8 ›› Issue (02): 202-206.doi: 10.3866/PKU.WHXB19920212

• ARTICLE • Previous Articles     Next Articles

Transient Behavior of n-InP/Fe3+, Fe2+ Interface Using Small Current Step

Qian Dao-Sun; Zhao Jun   

  1. Department of Applied Chemistry, Shanghai Jiaotong University, Shanghai 200030
  • Received:1990-10-04 Revised:1991-05-11 Published:1992-04-15
  • Contact: Qian Dao-Sun

Abstract: In this paper the transient behavior of n-InP semiconductor electrode in Fe~(3+)/Fe~(2+) solution using current step method is studied. From the equivalent circuit of the n-InP electrode under irradiation, a theoretical model for the change of photopoten-tial is derived in the presence of a small signal. The results of the experiments confirm the derivation. On the basis of the experiments and the theoretical model we also develop a method for measuring the capacitance of the space charge layer (C_(sc)). The observation of the influences of various light intensities is studied also.

Key words: Indium phosphide, Semiconducting electrode, Photoelectrochemistry, Transient method